By Ajit Ram Verma
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Extra info for Crystal growth and dislocations
R. Gibb and J. S . Anderson, J . , 1972,4, 379. 26 Surface and Defect Properties of Solids new ordered phase. 60 nm for Ti,,O,g, of the (121) series. The spacing is more variable in the (Ti,Cr)O, oxides; for example, the (253) series covers a fairly wide composition range. 03 nm for n = 48. There is also some uncertainty about the microstructure of these high-index CS planes. Bursill and Hyde have taken lattice fringe images of high-index CS planes which are clearly segmented into varying lengths of two components.
Kimura's conclusion is that the equilibrium configuration corresponds to the dispersion of localized defects, and that Wadsley defects are not the predominant form of accommodating non-stoicheiometry. His treatment does not take account of the ' tunnel stuffing' that has been established by structure determinations for (Nb,Ge),,,, but it is clear that the problem of defects in block and CS structures can only be resolved by electron microscopy of the local structure. Reports on this have not yet appeared, but it is of interest that lijimaS3has obtained evidence for the presence of localized defects-relaxed defect complexes rather than classical point defects-in Kimura's materials.
Under these circumstances, the observed chemistry and structure of a system may, in reality, be explored over a metastable free energy surface in temperature-composition-chemical potential space. ' 53 S. Iijima, personal communication; to be published. 5 4 Changes in the total atomic ratios of a solid-state system (within a certain range) do not then result in separation into two coexisting phases, neither do they involve the randomized introduction of defects, as in typical non-stoicheiometric solid-solutioo systems.